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RURP8120
Data Sheet January 2000 File Number 3661.3
8A, 1200V Ultrafast Diode
The RURP8120 is an ultrafast diode with soft recovery characteristics (trr < 100ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Formerly developmental type TA49095.
Features
* Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <100ns * Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V * Avalanche Energy Rated * Planar Construction
Applications
* Switching Power Supplies * Power Switching Circuits * General Purpose
Ordering Information
PART NUMBER RURP8120 PACKAGE TO-220AC BRAND RURP8120
Packaging
JEDEC TO-220AC
ANODE CATHODE CATHODE (FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
K
A
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RURP8120 UNITS V V V A A A W mJ
oC
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 144oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Avalanche Energy (See Figure 10 and Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ
1200 1200 1200 8 16 100 75 20 -65 to 175
1
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RURP8120
Electrical Specifications
SYMBOL VF IF = 8A IF = 8A, TC = 150oC IR VR = 1200V VR = 1200V, TC = 150oC t rr IF = 1A, dIF/dt = 100A/s IF = 8A, dIF/dt = 100A/s ta tb Q RR CJ RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. t rr = Reverse recovery time (See Figure 9), summation of ta + tb. t a = Time to reach peak reverse current (See Figure 9). t b = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). RJC = Thermal resistance junction to case. QRR = Reverse Recovery Charge. CJ = Junction Capacitance. pw = pulse width. D = duty cycle. IF = 8A, dIF/dt = 100A/s IF = 8A, dIF/dt = 100A/s IF = 8A, dIF/dt = 100A/s VR = 10V, IF = 0A TC = 25oC, Unless Otherwise Specified TEST CONDITION MIN TYP 60 40 380 25 MAX 2.1 1.9 100 500 100 110 2 UNITS V V A A ns ns ns ns nC pF
oC/W
Typical Performance Curves
40 IR , REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 500 100 10 100oC 1 0.1 25oC 0.01 175oC
10
100oC 175oC 1 0.5 25oC
0.001 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 1200 VF, FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
RURP8120 Typical Performance Curves
125 TC = 25oC, dIF/dt = 100A/s t, RECOVERY TIMES (ns) 100 t, RECOVERY TIMES (ns) 150 trr 100 tb 50 ta
(Continued)
200
TC = 100oC, dIF/dt = 100A/s
75 trr 50 ta 25
tb
0 0.5 1 IF, FORWARD CURRENT (A)
4
8
0
0.5
1 4 IF, FORWARD CURRENT (A)
8
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT
IF(AV) , AVERAGE FORWARD CURRENT (A)
300 TC = 175oC, dIF/dt = 100A/s t, RECOVERY TIMES (ns)
10
8 DC 6 SQ. WAVE 4
200 trr
100
tb
2
ta 0
0.5
1 IF, FORWARD CURRENT (A)
4
8
0 100
115
130
145
160
175
TC , CASE TEMPERATURE (oC)
FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
100 CJ , JUNCTION CAPACITANCE (pF)
80
60
40
20
0 0 50 100 150 200 VR , REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
3
RURP8120 Test Circuits and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L
DUT RG VGE t1 t2
CURRENT SENSE + VDD 0
IF
dIF dt ta
trr tb
IGBT
-
0.25 IRM IRM
FIGURE 8. trr TEST CIRCUIT
I = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV
FIGURE 9. trr WAVEFORMS AND DEFINITIONS
VAVL
IL
IL
t0 t1 t2 t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com 4

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